(China (Mainland))
Product Summary
The ATF-13736 is a high perfor-mance gallium arsenide Schottky-barrier-gate field effect transistorhoused in a cost effectivemicrostrip package. Its noisefigure makes this device appropri-ate for use in the gain stages oflow noise amplifiers operating inthe 2-16 GHz frequency range.This GaAs FET device has anominal 0.3 micron gate lengthwith a total gate periphery of5965-8722E250 microns. Proven gold basedmetallization systems and nitridepassivation assure a rugged,reliable device.
Parametrics
Absolute Maximum Ratings:
(1)Drain-Source Voltag:+5V;
(2)Gate-Source Voltage:-4V;
(3)Gate-Drain Voltage:-6V;
(4)Drain Current:IDSS mA;
(5)Power Dissipation:225mW;
(6)Channel Temperature:175℃;
(7)Storage Temperature:-65℃ to +175℃
Features
(1)Low Noise Figure:1.8 dB Typical at 12 GHz; (2)High Associated Gain:9.0 dB Typical at 12 GHz; (3)High Output Power:17.5 dB Typical at 12 GHz; (4)Cost Effective Ceramic Microstrip Package; (5)Tape-and-Reel Packaging Option Available
Diagrams
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