(China (Mainland))
Product Summary
NPN medium power transistor in a SOT89 plasticpackage. PNP complements: BCX51, BCX52 and BCX53.
Parametrics
Absolute Maximum Ratings:
(1)Collector-emitter voltage:80V;
(2)Collector-base voltage:100V;
(3)Emitter-base voltage:5V;
(4)Collector current:1A;
(5)Peak collector current:1.5A;
(6)Base current:100mA;
(7)Peak base current:200mA;
(8)Total power dissipation, TS = 130℃:1W;
(9)Junction temperature:150℃;
(10)Storage temperature range-65℃ to 150℃
Features
(1)High current (max. 1 A);
(2)Low voltage (max. 80 V)
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20127175523762.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BCX56-16 |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BCX56-16 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
Negotiable |
|
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|
BCX56-16,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
|
|
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 |
BCX56-16,147 |
NXP Semiconductors |
Transistors Bipolar (BJT) Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) |
Data Sheet |
|
|
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 |
BCX56-16T100 |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN |
Data Sheet |
|
|
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|
BCX56-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN MED 1A 80V |
Data Sheet |
|
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