(China (Mainland))
Product Summary
The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands.The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.
Parametrics
Absolute maximum ratings (Ta = 25℃)
(1)Applied voltage, VCC :-0.3~+6.5 V; (2)Power dissipation:500mW; (3)Storage temperature,Tstg :-65~+125℃; (4)BR93LC46FV-W; (5)Operating temperature, Topr:-40~+85℃; (6)Terminal voltage:-0.3~VCC+0.3 V
Features
1) 64 words × 16 bits EEPROM
2) Operating voltage range
When reading : 2.0 to 5.5V
When writing : 2.7 to 5.5V
3) Low current consumption
Operating (at 5V) : 3mA (Max.)
Standby (at 5V) : 5μA (Max.)
4) Address can be incremented automatically during
read operations.
5) Auto erase and auto complete functions can be used
during write operations.
6) A write instruction inhibit function allows :
- write protection when power supply voltage is low.
- write disable state at power up.
- writing using command codes.
7) Compact packages
8) Display of READY / BUSY status
9) TTL-compatible input / output
10) Rewriting possible up to 100,000 times
11) Data can be stored for ten years without corruption.
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201272023512477.jpg">
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BR93L46RFVT-WE2 |
ROHM Semiconductor |
EEPROM MICROWIRE 1K BIT 64X16 2.5V/3.3V/5V |
Data Sheet |
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