Product Summary

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factorcorrection.

Parametrics

Absolute Maximum Ratings:
(1)Drain-Source Voltage:500V; (2)Drain Current,Continuous (TC = 25℃):5A; Continuous (TC = 100℃):3.0A; (3)Drain Current:20A; (4)Gate-Source voltage:±30V; (5)Single Pulsed Avalanche Energy:270mJ; (6)Avalanche Current:5A; (7)Repetitive Avalanche Energy:8.9mJ; (8)Peak Diode Recovery dv/dt:4.5V/ns; (9)Power Dissipation(TC = 25℃):39-89W; Derate above 25℃:0.31-0.71W/℃; (10)Operating and Storage Temperature Range:-55℃ to +150℃; (11)Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds:300℃

Features

(1)5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V; (2)Low gate charge ( typical 12.8 nC); (3)Low Crss ( typical 9 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271964641252.jpg">

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(USD)		 Quantity
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1-25: $1.35
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0-1: $0.88
1-25: $0.77
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1-25: $0.80
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1-10: $0.87
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0-1: $1.16
1-25: $0.93
25-100: $0.70
100-250: $0.65