Product Summary

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications.

Parametrics

Absolute Maximum Ratings ,Tc=25℃ unless otherwise noted:
(1)VCES, Collector-Emitter Voltage: 1000 V;
(2)VGES, Gate-Emitter Voltage: ± 25 V;
(3)IC,Collector Current ,Tc= 25℃:50 A;Collector Current , Tc= 100℃:35 A;
(4)ICM (note1), Pulsed Collector Current :100 A;
(5)IF, Diode Continuous Forward Current, TC = 100℃:15 A;
(6)PD, Maximum Power Dissipation,TC=25℃:156 W;Maximum Power Dissipation,TC = 100℃:63 W;
(7)TJ, Operating Junction Temperature:-55 to +150 ℃;
(8)Tstg, Storage Temperature Range:-55 to +150℃;
(9)TL,Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds:300℃
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Features

(1)High Speed Switching;
(2)Low Saturation Voltage: VCE(sat) = 2.5V(IC = 60A);
(3)High Input Impedance;
(4)Built-in Fast Recovery Diode

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20128661737867.jpg">

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FGA50N100BNTD2
FGA50N100BNTD2
Fairchild Semiconductor
IGBT Transistors N-ch / 50A 1000V
Data Sheet
0-1: $3.37
1-25: $2.93
25-100: $2.77
100-250: $2.50
FGA50N100BNTDTU
FGA50N100BNTDTU
Fairchild Semiconductor
IGBT Transistors 600V 4 0A UFD
Data Sheet
0-220: $2.32
220-250: $2.09
250-500: $1.88
500-1000: $1.59