(China (Mainland))
Product Summary
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
Absolute Maximum Ratings:
(1)ID,TA = 25℃, Continuous Drain Current, VGS=10V: 14A;
(2)ID, TA = 70℃, Continuous Drain Current, VGS=10V: 11 A;
(3)IDM, Pulsed Drain Current: 110A;
(4)PD,TA = 25°C, Power Dissipation:2.5 W;Linear Derating Factor: 0.02 W/℃;
(5)VGS, Gate-to-Source Voltage :± 8.0 V;
(6)EAS, Single Pulse Avalanche Energy:230 mJ;
(7)IAR, Avalanche Current:See Fig.16c, 16d, 19, 20;
(8)EAR, Repetitive Avalanche Energy:See Fig.16c, 16d, 19, 20 ;
(9)TJ, TSTG, Junction and Storage Temperature Range:-55 to + 150 ℃
Features
(1)Advanced Process Technology;
(2)Ultra Low On-Resistance;
(3)Fast Switching;
(4)Repetitive Avalanche Allowed up to Tjmax
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20128641637128.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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