Product Summary

The K9HCG08U1M-PCB0 is a 32G-bit NAND Flash Memory with spare 1G-bit. It is Offered in 4Gx8bit, and its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 4,224-byte page and an erase operation can be performed in typical 1.5ms on a (512K+16K)byte block. The K9HCG08U1M-PCB0 serves as the ports for address and data input/output as well as command; (2)input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The K9HCG08U1M-PCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9HCG08U1M-PCB0 absolute maximum ratings: (1)VCC: -0.6 V to + 4.6 V; (2)VIN: -0.6 V to + 4.6 V; (3)VI/O: -0.6 V to Vcc+0.3 V(<4.6V); (4)TBIAS: -10℃ to +125℃; (5)TSTG: -65℃ to +150℃; (6)Ios: 5 mA.

Features

K9HCG08U1M-PCB0 features: (1)Voltage Supply: 2.7 V ~ 3.6 V; (2)Organization Memory Cell Array: (2G + 64M) x 8bit; (3)Organization Data Register: (4K + 128) x 8bit; (4)Automatic Program and Erase Page Program : (4K + 128)Byte; (5)Page Read Operation Size: (4K + 128)Byte; (6)Random Read: 60μs(Max.); (7)Serial Access: 25ns(Min.); (8)*K9XDG08U5M: 50ns(Min.); (9)Memory Cell: 2bit/Memory Cell; (10)Fast Write Cycle Block Erase Time: 1.5ms(Typ.).

Diagrams

K9HCG08U1M-PCB0 pin configuration