Product Summary
Designed primarily for wideband large signal stages in the UHF frequency range.
Parametrics
ABSOLUTE MAXIMUM RATINGS (Tcase = 25℃):
(1)VCEO, Collector-Emitter Voltage: 16 Vdc;
(2)VCBO, Collector-Base Voltage: 30 Vdc;
(3)VEBO, Emitter-Base Voltage: 3.0 Vdc;
(4)IC, Collector Current :150 mA
Features
(1)Specified @ 12.5 V, 870 MHz Characteristics;
(2)Output Power = .5 W;
(3)Minimum Gain = 8.0 dB;
(4)Efficiency 50%;
(5)Cost Effective Macro X Package;
(6)Electroless Tin Plated Leads for Improved Solderability
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201281225242545.jpg">
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF559 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
|||||||||||||||||||||||
MRF559G |
TRANS NPN 16V 150MA MACRO X |
Data Sheet |
|
|
||||||||||||||||||||||||
MRF559LF |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|