Product Summary

The NE32484A is a Hetero Junction FET that utilizes thehetero junction to create high mobility electrons. Its excellentlow noise and high associated gain make it suitable for DBS,TVRO and another commercial systems.

Parametrics

ABSOLUTE MAXIMUM RATINGS (TA = 25℃):
(1)Drain to Source Voltage,VDS:4.0V;
(2)Gate to Source Voltage,VGS:-3.0V;
(3)Drain Current,ID:IDSS mA;
(4)Gate Current,IG:100μA;
(5)Total Power Dissipation,Ptot:165mW;
(6)Channel Temperature,Tch:150℃;
(7)Storage Temperature,Tstg:-65℃ to +150℃

Features

(1)Super Low Noise Figure & High Associated Gain,NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz;
(2)Gate Length : Lg≤ 0.25μm;
(3)Gate Width : Wg = 200μm

Diagrams

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NE3210S01
NE3210S01

CEL

Transistors RF GaAs Super Lo Noise HJFET

Data Sheet

0-1: $2.75
1-10: $2.41
10-100: $2.18
100-500: $1.94
NE3210S01-A
NE3210S01-A

NEC/CEL

MOSFET Super Lo Noise HJFET

Data Sheet

Negotiable 
NE3210S01-T1B
NE3210S01-T1B

CEL

Transistors RF GaAs Super Lo Noise HJFET

Data Sheet

0-4000: $1.97
NE32500
NE32500

Other


Data Sheet

Negotiable 
NE32584C
NE32584C

Other


Data Sheet

Negotiable 
NE32584C-S
NE32584C-S

NEC/CEL

Transistors RF GaAs 84C LO NO HJ FET

Data Sheet

Negotiable