(China (Mainland))
Product Summary
PRODUCT SUMMARY:
1)VDS :-20V
2)rDS(on) :0.006W @ VGS = -10 V
3)ID :-24A
Parametrics
ABSOLUTE MAXIMUM RATINGS (TA = 25℃ UNLESS OTHERWISE NOTED):
(1)Drain-Source Voltage:-30V; (2)Gate-Source Voltage:"25V; (3)Continuous Drain Current (TJ = 150℃):TA = 25℃:-24 to -14A;:TA = 70℃:-1.9 to -1.1A; (4)Pulsed Drain Current:-60A; (5)continuous Source Current (Diode Conduction):-4.5 to -1.6A; (6)Maximum Power Dissipation:TA = 25℃:1.9 to 5.4W;TA = 70℃:1.2 to 3.4W; (7)Operating Junction and Storage Temperature Range:-55 to 150℃
Features
(1)TrenchFETr Power MOSFETS; (2)New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20127233039517.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 Si7447DP |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SI7401DN-T1 |
Vishay/Siliconix |
MOSFET 20V 11A 3.8W |
Data Sheet |
Negotiable |
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SI7401DN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 11A 3.8W |
Data Sheet |
Negotiable |
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|
SI7402DN-T1-E3 |
Vishay/Siliconix |
MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V |
Data Sheet |
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SI7402DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V |
Data Sheet |
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Si7403BDN |
Other |
|
Data Sheet |
Negotiable |
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SI7403BDN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 8.0A 9.6W |
Data Sheet |
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