(China (Mainland))
Product Summary
Designed for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,and power amplifiers
Parametrics
MAXIMUM RATINGS:
(1)Collector-Emitter Voltage:80Vdc; (2)Emitter-Base Voltage:5Vdc; (3)Collector Current-Continuous Peak:8-16Adc; (4)Total Power Dissipation, TC = 25℃:20W;Derate above 25℃:16W/℃; (5)Total Power Dissipation*,TA = 25℃:1.75W;Derate above 25℃:0.014W/℃; (6)Operating and Storage Junction TemperatureRange:-55℃ to+ 150℃
Features
(1)Pb-Free Packages are Available; (2)Lead Formed for Surface Mount Application in Plastic Sleeves(No Suffix); (3)Straight Lead Version in Plastic Sleeves (“-1” Suffix); (4)Lead Formed Version in 16 mm Tape and Reel for Surface Mount(“T4” Suffix); (5)Electrically Similar to Popular D44H/D45H Series; (6)Low Collector Emitter Saturation Voltage:VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; (7)Fast Switching Speeds; (8)Complementary Pairs Simplifies Designs; (9)Epoxy Meets UL 94, V-0 @ 0.125 in; (10)ESD Ratings: Human Body Model, 3B u 8000 V;Machine Model, Cu 400 V
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201272324116212.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MJD45H11T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 80V 20W PNP |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJD41CRLG |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 20W NPN |
Data Sheet |
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MJD45H11T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 80V 20W PNP |
Data Sheet |
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MJD47 |
ON Semiconductor |
Transistors Bipolar (BJT) 1A 250V 15W NPN |
Data Sheet |
Negotiable |
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MJD47/50 |
Other |
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Data Sheet |
Negotiable |
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MJD45H11T4 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP Gen Pur Switch |
Data Sheet |
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MJD47TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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