Product Summary

The NE32484A is a Hetero Junction FET that utilizes thehetero junction to create high mobility electrons. Its excellentlow noise and high associated gain make it suitable for DBS,TVRO and another commercial systems.

Parametrics

ABSOLUTE MAXIMUM RATINGS (TA = 25℃):
(1)Drain to Source Voltage,VDS:4.0V;
(2)Gate to Source Voltage,VGS:-3.0V;
(3)Drain Current,ID:IDSS mA;
(4)Gate Current,IG:100μA;
(5)Total Power Dissipation,Ptot:165mW;
(6)Channel Temperature,Tch:150℃;
(7)Storage Temperature,Tstg:-65℃ to +150℃

Features

(1)Super Low Noise Figure & High Associated Gain,NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz;
(2)Gate Length : Lg≤ 0.25μm;
(3)Gate Width : Wg = 200μm

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/2012816952174.jpg">

NE321000
NE321000
Other

Data Sheet
Negotiable 
NE3210S01
NE3210S01
CEL
Transistors RF GaAs Super Lo Noise HJFET
Data Sheet
0-1: $2.75
1-10: $2.41
10-100: $2.18
100-500: $1.94
NE3210S01-A
NE3210S01-A
NEC/CEL
MOSFET Super Lo Noise HJFET
Data Sheet
Negotiable 
NE3210S01-T1B
NE3210S01-T1B
CEL
Transistors RF GaAs Super Lo Noise HJFET
Data Sheet
0-4000: $1.97
NE3210S01-T1B-A
NE3210S01-T1B-A
NEC/CEL
MOSFET Super Lo Noise HJFET
Data Sheet
Negotiable 
NE32400
NE32400
Other

Data Sheet
Negotiable